cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 1 / 10 MTD011N10RH8 cyste k product specification n - channel enhancement mode power mosfet MTD011N10RH8 features ? single drive requirement ? low on - resistance ? fast switching characteristic ? repetitive avalanche rated ? pb - free lead plating and halogen - free package symbol outline ordering information device package shipping MTD011N10RH8 - 0 - t6 - g dfn 5 6 ( pb - free lead plating and halogen - free package ) 3000 pcs / tape & reel MTD011N10RH8 dfn5 6 g gate d drain s source p in 1 bv dss 100v i d @v gs =10v, t c =25 c 45a i d @v gs =10v, t a =25 c 13.8a r dson(typ) v gs =10v, i d =11.5a 9.2 m v gs =4.5v, i d =9.5a 12.8m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pcs / tape & reel,13 reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 2 / 10 MTD011N10RH8 cyste k product specification absolu te maximum ratings (ta=25 ? c) parameter symbol 10s steady state unit drain - sour c e voltage v ds 10 0 v gate - source voltage v gs 20 continuous drain current @ t c =25 ? c , v gs =10v (note 1) i d 45 a continuous drain current @ t c =100 ? c , v gs =10v (note 1) 28 continuous drain current @ t a =25 ? c , v gs =10v (note 2) i dsm 15 10 continuous drain current @ t a =70 ? c , v gs =10v (note 2) 12 8 continuous drain current @ t a =85 ? c , v gs =10v (note 2) 10.8 7.2 pulsed drain current (note 3) i dm 180 *1 avalanche current (note 3) i as 40 avalanche energy @ l=0.5mh, i d =33a, v dd =50v (note 2, 4) e as 272 mj repetitive avalanche energy @ l=0.05mh (note 3) e ar 5 *2 total power dissipation t c =25 (note 1) p d 50 w t c =100 (note 1) 20 t a =25 ? c (note 2) p dsm 5.7 2.5 t a =70 ? c (note 2) 4.0 1.8 t a =85 ? c (note 2) 3.6 1.6 operating junction and storage temperature range tj, tstg - 55~+1 50 ? c thermal data parameter symbol typical maximum unit thermal resistance, junction - to - ambient (note 2) t 10s r ja 18 22 ? c /w steady state 42 50 thermal resistance, junction - to - case r jc 2.2 2.5 note : 1 . the power dissipation p d is based on t j(max) =150 c, using junction - to - case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr - 4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user s specific board design. 3 . repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c. 4.100% tested by conditions of l=0.5mh, i as =20a, v gs =10v, v dd =50v
cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 3 / 10 MTD011N10RH8 cyste k product specification characteristics (t c =25 ? symbol min. typ. max. unit test conditions static bv dss 100 - - v v gs = 0v , i d = 250 a v gs(th) 1.3 - 2.7 v ds = v gs , i d = 250 a g fs *1 - 30 - s v ds = 10v , i d = 20a i gss - - 100 n a v gs = 20v i dss - - 1 a v ds = 8 0v, v gs =0v - - 25 v ds = 80v, v gs =0v, tj=125 ? c r ds ( on ) *1 - 9.2 12 m v gs = 10v , i d = 11.5a - 12.8 17 v gs = 4.5 v , i d = 9.5a dynamic ciss - 2841 - pf v gs =0v, v ds =25v, f=1mhz co ss - 313 - crss - 33 - qg *1, 2 - 54 - nc v ds =50v, v gs =10v, i d =11.5a qgs *1, 2 - 11 - qgd *1, 2 - 12 - t d(on) *1, 2 - 21 - ns v ds =50v, i d =11.5a, v gs =10v, r gs =3 tr *1, 2 - 18.6 - t d(off) *1, 2 - 56 - t f *1, 2 - 7 - rg - 2.4 - f=1mhz source - drain diode i s *1 - - 45 a i sm *3 - - 180 v sd *1 - 0.82 1.2 v i s =15a, v gs =0v trr - 39 - ns i f =22a, di f /dt=100a/ s qrr - 69 - nc note : * 1. pulse test : pulse width ? 3 0 0s, duty cycle ? 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature.
cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 4 / 10 MTD011N10RH8 cyste k product specification recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 5 / 10 MTD011N10RH8 cyste k product specification typica l characteristics typical output characteristics 0 20 40 60 80 100 0 1 2 3 4 5 v ds , drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v v gs =3.5v 4v 4 .5v 5 v 6v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =11.5a drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =11.5a r ds(on) @tj=25c : 9.2m typ.
cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 6 / 10 MTD011N10RH8 cyste k product specification typical characteristic s(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10v v ds =15v gate charge characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =11.5a v ds =50v maximum safe operating area 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t c =25c, tj=150c v gs =10v, r jc =2.5c/w single pulse dc 1s r dson limited 10ms 1ms 100ms 100 s maximum drain current vs casetemperature 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175 t c , casetemperature(c) i d , maximum drain current(a) v gs =10v, r jc =2.5c/w, single pulse
cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 7 / 10 MTD011N10RH8 cyste k product specification typical characteristic s(cont.) typical transfer characteristics 0 20 40 60 80 100 0 2 4 6 8 10 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse maximum power dissipation 0 400 800 1200 1600 2000 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t c =25c r jc =2.5c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =2.5c/w
cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 8 / 10 MTD011N10RH8 cyste k product specification reel dimension carrier tape dimension pin #1
cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 9 / 10 MTD011N10RH8 cyste k product specification recommended wave soldering condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temp erature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electronics corp. spec. no. : c 169h8 issued date : 20 15 . 11 . 23 revised date : 201 6 . 0 4 .2 7 page no. : 10 / 10 MTD011N10RH8 cyste k product specification dfn5 dim millimeters inches dim millimeters inches min. max. min. max. min. max. min. max. a 0. 900 1.000 0.035 0.039 k 1.190 1.390 0.047 0.055 a3 0. 254 ref 0.010 ref b 0.350 0.450 0.014 0.018 d 4.944 5.096 0.195 0.201 e 1.270 typ. 0.050 typ. e 5.974 6.126 0.235 0.241 l 0.559 0.711 0.022 0.028 d1 3.910 4.110 0.154 0.162 l 1 0.424 0.576 0.017 0.023 e1 3.375 3.575 0.133 0.141 h 0.574 0.726 0.023 0.029 d2 4.824 4.976 0.190 0.196 10 12 10 12 e2 5.674 5.826 0.223 0.229 notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please contact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? all rights are reserved. repr oduction in whole or in part is prohibited without the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support ap plications, or systems. ? cyste k assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. marking : 8 - lead dfn5 6 plastic package cys package code : h8 date code device name d011 n10r
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